rev 2 september 2005 1/9 9 2SD882 npn medium power transistor features high current low saturation voltage complement to 2sb772 applications voltage regulation relay driver generic switch audio power amplifier dc-dc converter description the device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. the complementary pnp type is 2sb772. order codes internal schematic diagram sot-32 (to-216) 3 2 1 part number marking package packing 2SD882 d882 sot-32 tube www.st.com
1 absolute maximum ratings 2SD882 2/9 1 absolute maximum ratings table 1. absolute maximum rating table 2. thermal data symbol parameter value unit v cbo collector-base voltage (i e = 0) 60 v v ceo collector-emitter voltage (i b = 0) 30 v v ebo collector-base voltage (i c = 0) 5v i c collector current 3 a i cm collector peak current (t p < 5ms) 6a i b base current 1 a i bm base peak current (t p < 5ms) 2a p tot total dissipation at t c = 25c 12.5 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case thermal resistance junction-case ____________________ max 10 c/w
2SD882 2 electrical characteristics 3/9 2 electrical characteristics table 3. electrical characteristics (t case = 25c; unless otherwise specified) note: 1 pulsed duration = 300 s, duty cycle 1.5%. symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 60 v 10 a i ceo collector cut-off current (i b = 0) v ce = 30 v 100 a i ebo emitter cut-off current (i c = 0) v eb = 5 v 10 a v (br)ceo note: 1 collector-emitter breakdown voltage (i b = 0 ) i c = 10 ma 30 v v (br)cbo collector-base breakdown voltage (i e = 0 ) i c = 100 a 60 v v (br)ebo emitter-base breakdown voltage (i c = 0 ) i e = 100 a 5v v ce(sat) note: 1 collector-emitter saturation voltage i c = 1 a i b = 50 ma i c = 2 a i b = 100 ma i c = 3 a i b = 150 ma 0.4 0.7 1.1 v v v v be(sat) note: 1 base-emitter saturation voltage i c = 2 a i b = 100 ma 1.2 v hfe dc current gain i c = 100 ma v ce = 2 v i c = 1 a v ce = 2 v i c = 3 a v ce = 2 v 100 80 30 300 ft transition frequency i c = 0.1 a v ce = 10 v 100 mhz
2 electrical characteristics 2SD882 4/9 2.1 typical characteristics figure 1. reverse biased area figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage
2SD882 3 package mechanical data 5/9 3 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
3 package mechanical data 2SD882 6/9 dim. mm inch min. typ. max. min. typ. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 c 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 d 15.4 16.0 0.606 0.629 e 2.2 0.087 e3 4.15 4.65 0.163 0.183 f 3.8 0.150 g 3 3.2 0.118 0.126 h 2.54 0.100 h2 2.15 0.084 c1 h2 0016114 sot-32 (to-126) mechanical data
2SD882 3 package mechanical data 7/9
4 revision history 2SD882 8/9 4 revision history date revision changes 09-sep-2005 2 final datasheet. new template
2SD882 4 revision history 9/9 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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